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Volume 3 Issue 3
May  2021
Article Contents

Feng B, Chen Y F, Sun D, Yang Z Y, Yang B, Li X, Li T. 2021. Precision integration of grating-based polarizers onto focal plane arrays of near-infrared photovoltaic detectors for enhanced contrast polarimetric imaging. Int. J. Extrem. Manuf. 3, 035201.
Citation: Feng B, Chen Y F, Sun D, Yang Z Y, Yang B, Li X, Li T. 2021. Precision integration of grating-based polarizers onto focal plane arrays of near-infrared photovoltaic detectors for enhanced contrast polarimetric imaging. Int. J. Extrem. Manuf. 3, 035201.

Precision integration of grating-based polarizers onto focal plane arrays of near-infrared photovoltaic detectors for enhanced contrast polarimetric imaging


doi: 10.1088/2631-7990/abf5c8
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  • Publish Date: 2021-05-24
  • Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status, which offers another degree of freedom in infrared remote sensing. However, to scale up by monolithically integrating grating-based polarizers onto a focal plane array (FPA) of infrared detectors, fundamental technical obstacles must be overcome, including reductions of the extinction ratio by the misalignment between the polarizer and the detector, grating line width fluctuations, the line edge roughness, etc. This paper reports the authors’ latest achievements in overcoming those problems by solving key technical issues regarding the integration of large-scale polarizers onto the chips of FPAs with individual indium gallium arsenide/indium phosphide (InGaAs/InP) sensors as the basic building blocks. Polarimetric and photovoltaic chips with divisions of the focal plane of 540 × 4 pixels and 320 × 256 superpixels have been successfully manufactured. Polarimetric imaging with enhanced contrast has been demonstrated. The progress made in this work has opened up a broad avenue toward industrialization of high quality polarimetric imaging in infrared wavelengths.

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Precision integration of grating-based polarizers onto focal plane arrays of near-infrared photovoltaic detectors for enhanced contrast polarimetric imaging

doi: 10.1088/2631-7990/abf5c8
  • 1 Nanolithography and Application Research Group, State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, People's Republic of China
  • 2 State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China

Abstract: 

Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status, which offers another degree of freedom in infrared remote sensing. However, to scale up by monolithically integrating grating-based polarizers onto a focal plane array (FPA) of infrared detectors, fundamental technical obstacles must be overcome, including reductions of the extinction ratio by the misalignment between the polarizer and the detector, grating line width fluctuations, the line edge roughness, etc. This paper reports the authors’ latest achievements in overcoming those problems by solving key technical issues regarding the integration of large-scale polarizers onto the chips of FPAs with individual indium gallium arsenide/indium phosphide (InGaAs/InP) sensors as the basic building blocks. Polarimetric and photovoltaic chips with divisions of the focal plane of 540 × 4 pixels and 320 × 256 superpixels have been successfully manufactured. Polarimetric imaging with enhanced contrast has been demonstrated. The progress made in this work has opened up a broad avenue toward industrialization of high quality polarimetric imaging in infrared wavelengths.

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