The recent development of soft x-ray interference lithography in SSRF

Jun Zhao; Shumin Yang; Chaofan Xue; Liansheng Wang; Zhaofeng Liang; Lei Zhang; Yong Wang; Yanqing Wu; Renzhong Tai

doi:10.1088/2631-7990/ab70ae

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Volume 2 Issue 1

Mar. 2020

Article Contents

Article Navigation > International Journal of Extreme Manufacturing > 2020 > 2(1): 012005

Zhao J, Yang S M, Xue C F, Wang L S, Liang Z F, Zhang L, Wang Y, Wu Y Q, Tai R Z. 2020. The recent development of soft x-ray interference lithography in SSRF. Int. J. Extrem. Manuf. 2, 012005.

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Zhao J, Yang S M, Xue C F, Wang L S, Liang Z F, Zhang L, Wang Y, Wu Y Q, Tai R Z. 2020. The recent development of soft x-ray interference lithography in SSRF. Int. J. Extrem. Manuf. 2, 012005.

The recent development of soft x-ray interference lithography in SSRF

doi: 10.1088/2631-7990/ab70ae

Jun Zhao^1,2,
Shumin Yang^1,2,
Chaofan Xue^1,2,
Liansheng Wang^1,2,
Zhaofeng Liang¹,
Lei Zhang²,
Yong Wang^1,2,
Yanqing Wu^{1,2
,
,},
Renzhong Tai^{1,2
,
,}

More Information

1 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, CAS, Shanghai, People’s Republic of China
2 Shanghai Institute of Applied Physical, CAS, Shanghai, People’s Republic of China

Publish Date: 2020-03-01

Abstract

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This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility. Dual-beam, multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline. To improve the experimental performance, a precisereal-time vibration evaluation system has been established; and the lithography stability has been greatly improved. In order to meet the demands for higher resolution and practical application, novel experimental methods have been developed, such as high-order diffraction interference exposure, high-aspect-ratio and large-area stitching exposure, and parallel direct writing achromatic Talbot lithography. As of now, a 25 nm half-pitch pattern has been obtained; and a cm²exposure area has been achieved in practical samples. The above methods have been applied to extreme ultraviolet photoresist evaluation, photonic crystal and surface plasmonic effect research, and so on.
Keywords
Author Introduction
Prof. Yanqing Wu has long been engaged in the research of soft X-ray interference lithography technology, synchrotron radiation beamline theory and technology research. His research fields also include X-ray imaging detector research. He is the principal of SSRF XIL beamline, and currently undertakes and participates in a number of key R & D projects of the National Natural Science Foundation and the Ministry of Science and Technology.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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The recent development of soft x-ray interference lithography in SSRF

doi: 10.1088/2631-7990/ab70ae

1 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, CAS, Shanghai, People’s Republic of China

2 Shanghai Institute of Applied Physical, CAS, Shanghai, People’s Republic of China

Publish Date: 2020-03-01

Key words:

Abstract:

This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility. Dual-beam, multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline. To improve the experimental performance, a precisereal-time vibration evaluation system has been established; and the lithography stability has been greatly improved. In order to meet the demands for higher resolution and practical application, novel experimental methods have been developed, such as high-order diffraction interference exposure, high-aspect-ratio and large-area stitching exposure, and parallel direct writing achromatic Talbot lithography. As of now, a 25 nm half-pitch pattern has been obtained; and a cm²exposure area has been achieved in practical samples. The above methods have been applied to extreme ultraviolet photoresist evaluation, photonic crystal and surface plasmonic effect research, and so on.