• Open access free of charge
    • Free and high quality figure editing
    • Free widest possible global promotion for your research
Volume 2 Issue 2
Apr.  2020
Article Contents

Nakata Y, Hayashi1 E, Tsubakimoto K, Miyanaga N, Narazaki A, Shoji T, Tsuboi Y. 2020. Nanodot array deposition via single shot laser interference pattern using laser-induced forward transfer. Int. J. Extrem. Manuf. 2, 025101.
Citation: Nakata Y, Hayashi1 E, Tsubakimoto K, Miyanaga N, Narazaki A, Shoji T, Tsuboi Y. 2020. Nanodot array deposition via single shot laser interference pattern using laser-induced forward transfer. Int. J. Extrem. Manuf2, 025101.

Nanodot array deposition via single shot laser interference pattern using laser-induced forward transfer


doi: 10.1088/2631-7990/ab88bf
More Information
  • Publish Date: 2020-04-03
  • Laser-induced forward transfer (LIFT) is a direct-writing technique capable of depositing a single dot smaller than the laser wavelength at small shot energy through the laser-induced dot transfer (LIDT) technique. To deposit a single nanodot in a single shot of laser irradiation, a liquid nanodrop is transferred from donor to receiver and finally solidified via a solid–liquid–solid (SLS) process. In conventional LIDT experiments, multi-shots with step scanning have been used to form array structures. However, interference laser processing can achieve an arrayed process and generate a periodic structure in a single shot. In this study, a femtosecond laser interference pattern was first applied to LIDT, and an array of nanodots was successfully deposited in a single shot, producing the following unit structures: a single dot, adjoining dots, and stacking dots. The diameter of the smallest nanodot was 355 nm, and the narrowest gap between two adjoining nanodots was 17.2 nm. The LIDT technique produces high-purity, catalyst-free that do not require post-cleaning or alignment processes. Given these significant advantages, LIDT can expand the usability of nanodots in a wide range of fields.

  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Figures(1)

Article Metrics

Article views(644) PDF Downloads(58) Citation(0)

Nanodot array deposition via single shot laser interference pattern using laser-induced forward transfer

doi: 10.1088/2631-7990/ab88bf
  • 1 Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871, Japan
  • 2 Institute for Laser Technology, 1-8-4 Utsubo-honmachi, Nishi-ku, Osaka 550-0004, Japan
  • 3 National Institute of Advanced Industrial Science and Technology, Chuo 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • 4 Department of Chemistry, Osaka City University, 3-3-138, Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan

Abstract: 

Laser-induced forward transfer (LIFT) is a direct-writing technique capable of depositing a single dot smaller than the laser wavelength at small shot energy through the laser-induced dot transfer (LIDT) technique. To deposit a single nanodot in a single shot of laser irradiation, a liquid nanodrop is transferred from donor to receiver and finally solidified via a solid–liquid–solid (SLS) process. In conventional LIDT experiments, multi-shots with step scanning have been used to form array structures. However, interference laser processing can achieve an arrayed process and generate a periodic structure in a single shot. In this study, a femtosecond laser interference pattern was first applied to LIDT, and an array of nanodots was successfully deposited in a single shot, producing the following unit structures: a single dot, adjoining dots, and stacking dots. The diameter of the smallest nanodot was 355 nm, and the narrowest gap between two adjoining nanodots was 17.2 nm. The LIDT technique produces high-purity, catalyst-free that do not require post-cleaning or alignment processes. Given these significant advantages, LIDT can expand the usability of nanodots in a wide range of fields.

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return