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Volume 1 Issue 3
Dec.  2019
Article Contents

Nagata Y, Harada T, Watanabe T, Kinoshita H, Midorikawa K. At wavelength coherent scatterometry microscope using high-order harmonics for EUV mask inspection. Int. J. Extrem. Manuf. 1, 032001 (2019).
Citation: Nagata Y, Harada T, Watanabe T, Kinoshita H, Midorikawa K. At wavelength coherent scatterometry microscope using high-order harmonics for EUV mask inspection. Int. J. Extrem. Manuf. 1, 032001 (2019).

At wavelength coherent scatterometry microscope using high-order harmonics for EUV mask inspection


doi: 10.1088/2631-7990/ab3b4e
More Information
  • Publish Date: 2019-12-07
  • Extreme ultraviolet (EUV) lithography with reflective photomasks is currently being refined for high-volume manufacturing of chips with dimensions of 7 nm or less. EUV scanners can replace the most critical layers and provide lithography capabilities complementary to ArF technology. However, the fabrication and inspection of defect-free masks still remain one of the most critical issues facing EUV technology. In this review, we describe our research on the development of the 13.5-nm coherent scatterometry microscope (CMS) with high-order harmonic generation (HHG) for the mask inspection of EUV lithography. Using the HHG-CSM system, we observed programmed pattern defects in a periodic patterned mask. In the diffraction pattern from the EUV mask, a 2-nm wide line defect in an 88-nm line-and-space pattern as well as sub-100 nm sized absorber defects in a 112 nm hole pattern were both detected. By further improving the system, we demonstrated the successful reconstructions of an-88 nm periodic L/S pattern and a cross-pattern with a quantitative phase contrast. These results signify that the standalone HHG-CSM system has tremendous potential.
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At wavelength coherent scatterometry microscope using high-order harmonics for EUV mask inspection

doi: 10.1088/2631-7990/ab3b4e
  • 1 RIKEN Center for Advanced Photonics, RIKEN, 2-1 Hirosawa, Wako Saitama 351-0198, Japan
  • 2 Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan

Abstract: 

Extreme ultraviolet (EUV) lithography with reflective photomasks is currently being refined for high-volume manufacturing of chips with dimensions of 7 nm or less. EUV scanners can replace the most critical layers and provide lithography capabilities complementary to ArF technology. However, the fabrication and inspection of defect-free masks still remain one of the most critical issues facing EUV technology. In this review, we describe our research on the development of the 13.5-nm coherent scatterometry microscope (CMS) with high-order harmonic generation (HHG) for the mask inspection of EUV lithography. Using the HHG-CSM system, we observed programmed pattern defects in a periodic patterned mask. In the diffraction pattern from the EUV mask, a 2-nm wide line defect in an 88-nm line-and-space pattern as well as sub-100 nm sized absorber defects in a 112 nm hole pattern were both detected. By further improving the system, we demonstrated the successful reconstructions of an-88 nm periodic L/S pattern and a cross-pattern with a quantitative phase contrast. These results signify that the standalone HHG-CSM system has tremendous potential.

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