• Open access free of charge
    • Free and high quality figure editing
    • Free widest possible global promotion for your research
Volume 1 Issue 1
Dec.  2019
Article Contents

Ahmadi Z, Yakupoglu B, Azam N, Elafandi S, Mahjouri-Samani M. 2019. Self-limiting laser crystallization and direct writing of 2D materials. Int. J. Extrem. Manuf. 1, 015001.
Citation: Ahmadi Z, Yakupoglu B, Azam N, Elafandi S, Mahjouri-Samani M. 2019. Self-limiting laser crystallization and direct writing of 2D materials. Int. J. Extrem. Manuf. 1, 015001.

Self-limiting laser crystallization and direct writing of 2D materials


doi: 10.1088/2631-7990/ab0edc
More Information
  • Publish Date: 2019-12-01
  • The recent discovery of atomically thin two-dimensional (2D) quantum materials including transition metal dichalcogenides (TMDCs) has revealed a promising potential for advancing the future of optoelectronics, photonics, sensing, and energy applications. Direct growth, patterning, and integration of 2D materials on various substrates are essential steps toward enabling their potential for use in the next generation of devices. The conventional gas-phase growth techniques, however, are not compatible with direct patterning processes. In this work, a laser-based synthesis and processing method is reported that relies on self-limiting laser crystallization (SLLC) of the stoichiometric amorphous thin layer (~3-5 nm) of 2D materials. This technique mainly takes advantage of significant contrasts between the optical properties of the amorphous and crystalline MoS2 phases allowing the deliberate design of laser 2D material interactions for the self-limiting crystallization phenomena with increased quality and a broad processing window. This unique laser processing approach allows high-quality crystallization, direct writing, patterning, and the integration of various 2D materials into future functional devices.
  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Figures(2)

Article Metrics

Article views(1349) PDF Downloads(1428) Citation(0)

Self-limiting laser crystallization and direct writing of 2D materials

doi: 10.1088/2631-7990/ab0edc
  • Electrical and Computer Engineering Department, Auburn University, Auburn, AL, United States of America

Abstract: 

The recent discovery of atomically thin two-dimensional (2D) quantum materials including transition metal dichalcogenides (TMDCs) has revealed a promising potential for advancing the future of optoelectronics, photonics, sensing, and energy applications. Direct growth, patterning, and integration of 2D materials on various substrates are essential steps toward enabling their potential for use in the next generation of devices. The conventional gas-phase growth techniques, however, are not compatible with direct patterning processes. In this work, a laser-based synthesis and processing method is reported that relies on self-limiting laser crystallization (SLLC) of the stoichiometric amorphous thin layer (~3-5 nm) of 2D materials. This technique mainly takes advantage of significant contrasts between the optical properties of the amorphous and crystalline MoS2 phases allowing the deliberate design of laser 2D material interactions for the self-limiting crystallization phenomena with increased quality and a broad processing window. This unique laser processing approach allows high-quality crystallization, direct writing, patterning, and the integration of various 2D materials into future functional devices.

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return